Apurba Chakraborty

Assistant Professor, Gr-I

Compound semiconductor, heterostructure device modelling and characterization, two-dimensional (2D) material devices
Office D114, Department of Electrical and Electronics Engineering, BITS Pilani Goa

Journal Paper

  1. Rinku Rani Das, Santanu maity, Atanu Chowdhury and Apurba Chakraborty ,”Parametric Analysis on DC and Analog/Linearity response of Multi-Channel FinFET (Mch-FinFET) with spacer engineering” Analog Integrated Circuits and signal Processing, Springer, 2023 (ACCEPTED)
  2. Rinku Rani Das, Santanu maity, Atanu Chowdhury and Apurba Chakraborty, “Investigation of step Fin (SF), Step Drain (SD), and Step source (SS) FinFETs with trap effectIETE Journal of Research, Taylor & Francis, (2022).
  3. Rinku Rani Das, Santanu Maity, Atanu Chowdhury, Apurba Chakraborty and Suman Kumar Mitra, “Effect of Positive/Negative interface trap charges on the performance of multi Fin FinFET (M-FinFET” Silicon, Springer, 8557-8566, (2022).
  4. Rinku Rani Das, Santanu maity, Atanu Chowdhury and Apurba Chakraborty, “Impact of temperature on RF/linearity and harmonic distortion characteristics of Ge Multi channels FinFET (Mch-FinFET)” International Journal of RF and Microwave Computer-Aided Engineering, Wiley, 1-14, 2021
  5. Rinku Rani Das, Santanu maity, Atanu Chowdhury and Apurba Chakraborty “RF/Analog performance of GaAs Multi-Fin FinFET with Stress effect” Microelectronics Journal, Elsevier, 117, 105267, 2021
  6. Rinku rani das, Atanu choudhury, Apurba Chakraborty and Santanu Maity, “impact of stress effect on triple material gate step-FinFET with DC and AC analysis” Microsystem technologies, Springer, 26, 1813-1821, 2020.
  7. Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay Saptarsi Ghosh and Dhrubes Biswas,Elimination of V-shaped pits formation in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique” Semiconductor Science and Technology, 33, 4, 2018 (IF:2.654)
  8. Rinku rani das, santanu Maity, Atanu choudhury, Apurba Chakraborty, C.T. Bhunia and Partha P. sahu “Temperature dependent short channel parameters of FinFETs” Journal of Computational Electronics, 1001-1012, 17, 2018. (IF: 1.43)
  9. Saptarsi Ghosh, Subhashis Das, Syed M Dinara, Ankush Bag, Apurba Chakraborty, Sanjay K Jana and Dhrubes Biswas OFF-state Leakage and Current Collapse in AlGaN/GaN HEMTs: a Virtual Gate Induced by Dislocations” IEEE Transactions of Electron Devices, 65,  1333-1339, 2018. (IF:2.6)
  10. Apurba Chakraborty, SaptarsiGhosh, Partha Mukhopadhyay, Subhashis Das Ankush Bag and Dhrubes Biswas,Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis” Superlattices and Microstructures, 113, 147-152, 2018.
  11. Apurba Chakraborty, SaptarsiGhosh, ParthaMukhopadhyay, Syed MukulikaDinara, Sanjay K Jana, Ankush Bag, MihirMahata, Rahul Kumar, Subhashis Das, Palash Das and DhrubesBiswas,“Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN heterostructure”, Electronics Material Letter, 12, 232-236 (2016).(IF 2.88)
  12. Apurba Chakraborty, Dhrubes Biswas, “Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN by frequency dependent conductance measurement”, Applied Physics Letter, 106, 082112 (2015).(IF:3.5)
  13. ParthaMukhopadhyay, Rahul Kumar, SaptarsiGhosh, ApurbaChakraborty,Ankush Bag, SanjibKabi, Pallab Banerjee, DhrubesBiswas, “A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on si(100)”, Journal of Crystal Growth, 418, 134-144, (2015). (IF:1.69)
  14. Rahul Kumar, P. Mukhopadhyay, A. Bag, S. Kr. Jana, Chakraborty, S. Das, M. Kr. Mahata, D. Biswas “Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness” Applied Surface Science, 324 (2015) 304–309. (IF:2.7)
  15. Syed MukulikaDinara, Sanjay Kr. Jana, Saptarsi Ghosh, Partha Mukhopadhyay, Rahul Kumar, ApurbaChakraborty, Shekhar Bhattacharya and Dhrubes Biswas, “Enhancement of Two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaNheterostructure: strain and interface capacitance analysis” AIP Advances, 5, 047136 (2015). (IF:1.56)
  16. Ankush Bag, Rahul Kumar, ParthaMukhopadhyay, Mihir K. Mahata, ApurbaChakraborty, SaptarsiGhosh, Sanjay k. Jana and DhrubesBiswas, “Evolution and analysis of nitride surface and interfaces by statistical techniques: Acorrelation with RHEED through kinetic roughening” Electronics Material Letter, 11, 707-716, (2015). (IF:2.88)
  17. Ankush Bag,Palash Das, SaptarsiGhosh, parthaMukhopadhyay, Syed MukulikaDinara, Rahul Kumar, ApurbaChakraborty and DhrubesBiswas, “Fowler-Nordheim Tunneling Contribution in AlGaN/GaN n Si (111) Schottky Current” IETE Technical Review, Vol 33, issue 1, 7-10, 2015. (IF: 0.88)
  18. Saptarsi Ghosh, Syed MukulikaDinara, ParthaMukhopadhyay, Sanjay K. Jana, Ankush Bag, ApurbaChakraborty, Edward Yi Chang, Sanjib kabi, and DhrubesBiswas "Effects of threading dislocations on drain current dispersion and slow transients in unpassivatedAlGaN/GaN/Si heterostructure field-effect transistors" Applied Physics Letter, 105, 073502 (2014).(IF:3.5)
  19. Mihir Kumar Mahata, Saptarsi Ghosh, Sanjay Kumar Jana, Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay, Rahul Kumar, and Dhrubes Biswas, "Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaNheterostructures on sapphire with ultra-thin buffer" AIP Advances, 4, 117120, (2014). (IF:1.56)
  1. Devinderjit Multani, Ankush Bag and Apurba Chakraborty, “Mathematical Modelling of β-(AlxGa1-x)2O3/Ga2O3 Heterostructure”, 6th IEEE International Conference on Emerging Electronics, Bangalore, India, 11th -14th December, 2022.
  2. Rinku Rani Das, Atanu Chowdhury and Apurba Chakraborty,”Temperature dependent linearity/harmonic analysis for FinFET and gate all around (GAA) Nanowire FET”, 2nd International conference on Applied Electromagnetics, Signal processing and communication, KIIT University, 26th – 28th November, 2021.
  3. Apurba Chakraborty and Dhrubes Biswas, “Effect of AlGaN barrier thickness on trapping Characteristics in AlGaN/GaN heterostructures” IWPSD 2017, SSPL & IIT Delhi, Dec 11-15, 2017.
  4. Apurba Chakraborty, ParthaMukhopadhyay,SaptarsiGhosh, Ankush Bag, Mihir K. Mahata, Rahul Kumar, Subhashis Das, Palash Das,Sanjay K Jana and DhrubesBiswas,” The Effect of AlN Nucleation and GaN Layer in Indium Incorporation of InGaN Grown by PA-MBE” IWPSD 2015, IISC Bangalore, Dec 7-9, 2015. (POSTER)
  5. Apurba Chakraborty, ParthaMukhopadhyay, SaptarsiGhosh, Syed MukulikaDinara, Ankush Bag, Rahul Kumar, Mihir Kumar Mahata, Subhashis Das and DhrubesBiswas, ” Trapping characteristics comparison between AlGaN/InGaN/GaN and AlGaN/GaNheterostructure by conductance measurement”, IWPSD 2015, IISC Bangalore, Dec 7-9, 2015. (ORAL)
  6. Apurba Chakraborty and DhrubesBiswas, “Eradication of Trapping Effect in AlGaN/InGaN/GaNheterostructure by Fermi level Elevation”, 6th International Symposium on Growth of III-nitrides, Hamamatsu, Japan, Nov 8-13, 2015. (ORAL)
  7. ShubhankarMajumdar, SuhailShaik, Shubhashis Das, Rahul Kumar, Ankush Bag, Apurba Chakraborty, MihirMahata, SaptarsiGhosh and DhrubesBiswas,” Temperature dependent etching of gallium nitride layers grown by PA-MBE” ICMAP 2015, ISM Dhanbad, Dec 11-13, 2015.
  8. Subhashis Das, S. Majumdar, R. Kumar, Chakraborty, A. Bag and D. Biswas, “Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode” AMRP-2015,Longowal, India, March 13-14, 2015.
  9. Sanjay Kr. Jana, Saptarsi Ghosh, Syed MukulikaDinara, Apurba Chakraorty, and D. Biswas, "Comparative HRXRD analysis of GaN/AlGaNheterostructure on Al2O3 and Si (111) substrate grown by PAMBE" MRS FALL 2014. Boston, USA, November 30- December 5, 2014.
  10. Ankush Bag, Palash Das, SaptarsiGhosh, Partha Mukhopadhyay, Syed M. Dinara, Rahul Kumar, Apurba Chakraborty, Dhrubes Biswas “Fowler Nordheim Tunneling Contribution in AlGaN/GaN on Si (111) Schottky Barrier Current”, ICEE, Bangalore, Dec 3-6, 2014. (BEST POSTER AWARD)
  11. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Palash Das, Apurba Chakraborty, Syed M. Dinara, Sanjib Kabi and Dhrubes Biswas, “Investigation into the Source of Current Slump in AlGaN/GaN HEMT on Both Si (111) and Sapphire: Self Heating and Trapping” ICCMP, Shimla, India, November 4-6, 2014.
  12. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, Apurba Chakraborty, Syed MukulikaDinara, SanjibKabi and DhrubesBiswas, "Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire(0001)" IEEE TechSym 2014, IIT Kharagpur, Kharagpur, 28th February - 2nd March, 2014.
  13. Mihir Kr. Mahata, Saptarsi Ghosh, Sanjay Jana, Partha Mukhopadhyay, Apurba Chakraborty,Ankush Bag, Syed Mukulika Dinara, Rahul Kumar, Subhashis Das and DhrubesBiswas, “Growth and characterization of Al0.15Ga0.85As/GaAspseudomorphicheterostructure by MBE” IEEE TechSym2014, IIT Kharagpur, Kharagpur, 28th February - 2nd March, 2014.
  14. Apurba Chakraborty, SaptarshiGhosh, Ankush Bag, Palash Das and DhrubesBiswas, “Analytical expression of barrier layer for AlGaN/GaN HEMT” IWPSD 2013, New Delhi, India, Dec 10-13, 2013.
  1. ApurbaChakraborty, P.N Kondekar and Manish kumarYadav,“Drive Current Boosting and Low Sub-Threshold Swing Obtained by  Layer in Double-Gate Tunnel FET, Proc. Of  ESciNano 2012, Malaysia, Jan 5-7, 2012.
  2. Y. Manish, P.N. Kondekar, Jawar Singh, Apurba chakraborty “Optimized parasitic resistance performance of Multi-Fin device” International conference on research methodologies in electron device and circuits (EDC 2012), Amsterdam, Netherland, June 7-8, 2012.