About Faculty: Dr. Joshi joined the EEE department at BITS-Pilani K K Birla Goa Campus in May 2024. Before joining BITS-Pilani, he worked with Prof. Mayank Shrivastava at the Indian Institute of Science Bangalore as a postdoctoral researcher. He received his Ph.D. from the Indian Institute of Technology Jodhpur  in 2019. During his Ph.D., he worked in collaboration with Prof. Mayank Shrivastava at Indian Institute of Science Bangalore, where he was a visiting scholar. Dr. Joshi broadly works on physics-based analysis of power semiconductor devices based on emerging materials like Gallium Nitride (GaN). His work has addressed some of the most fundamental and challenging reliability issues in GaN High Electron Mobility Transistors. Dr. Joshi’s work has resulted in over 35 peer-reviewed publications (20 are in reputed journals such as IEEE TED, and 15 are in reputed IEEE conferences like IRPS and SISPAD). Besides, he holds a patent on optimizing GaN buffer doping to achieve ultra-high breakdown voltages in GaN HEMTs. He is also an active expert reviewer in the IEEE Transactions on Electron Devices and Elsevier’s Microelectronics Reliability journals.