A short note on Research Experience
Expertise :
Extensive use of Clean Room ( Class-100 to 10,000), Photolithography and Mask making, Electron Beam Lithography (Minimum beam spot size of 10nm) equipped with mini-CAD for patterning and transfer of about 30 nm gap pattern, CVD, Etching, Oxidation Technique, Electron Beam Evaporator for very thin metal deposition, Field Emission type SEM to obtain image of narrow quantum well or narrow patterns, Thin film and nanocrystal deposition using different CVD techniques, Sputtering etc.
Device Fabrication:
Successfully fabricated Single Electron Memory Device with short and narrow channel having nanocrystal Si dots as floating gate. The device is operated even at room temperature.
Instruments for Electrical Characterization:
Semiconductor Parameter Analyzers (HP4156), Pulse Generator (HP81105A), Probe Station equipped with close cycle He cryo-cooler (<10 K).
Scanning Probe Studies :
Use of Atomic Force Microscopy equipped with nanolithography techniques (Seiko Instrument, Japan) for making, manipulating and imaging nanometer size features. Various modes of operation; tapping, contact and non-contact mode to inject charge in nanocrystals and their probing, Kelvin Probe Microscopy to image surface potential.
