Dr. Arnab Hazra

Associate Professor, Department of Electrical & Electronics Engineering, BITS Pilani, Pilani Campus

Nanomaterials, graphene, Electronic Devices, Chemical Sensor, Resistive RAM
Chamber: Faculty Division II, Room No. 2247-D,
Department of Electrical and Electronics Engineering,
Birla Institute of Technology & Science, Pilani- 333031, Rajasthan. India.


[1] “A process for fabricating an undoped transition metal oxide (TMO) based p-n homojunction diode with high rectification efficiency”, Inventors: Partha Bhattacharyya and Arnab Hazra, Patent Number: LP 341257 (581/KOL/2015), Granted on 13/07/2020

[2] “A Process for Forming a TiO2 Nanotube based Room Temperature (27°C) Alcohol Sensor Device” , Partha Bhattacharyya and Arnab Hazra, [Indian patent], File No. 1285/KOL/2014, Filing date: 11.12.2014 (First examination report received)

[3] “A Process for Forming an Undoped p-type TiO2 based Sensor Device for Accurate Sensing of Low ppm Ethanol at Low Temperature”, Partha Bhattacharyya and Arnab Hazra,  [Indian patent], File No. 1286/KOL/2014, Filing date: 11.12.2014 (First examination report received)